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Anonymous Posted 10 years ago
Letter Writing
Review my letter for PhD position
This is my first draft of letter for a PhD position..Kindly review
Respected Sir,
I write this to express my earnest interest in pursuing a doctoral degree under your guidance (CEA code: SL-DRT-16-0649) . I have obtained an Integrated dual degree (Bachelor’s + Master’s) in Material Science and Technology from Indian Institute of Technology(IIT) – Banaras Hindu University, which is one of the topmost and reputed institute of India. I had completed my degree in 2012 , and thereafter , I was engaged in various jobs in various organizations in India.
What interests me is the area of focus of your research, which you have described in introduction to the topic . I have been an enthusiastic student of Semiconductors ever since I conducted my dissertation in the field of semiconductor materials. Conducting study on dopant migration in HgCdTe under ion irradiation will be a topic close to my heart as I have performed similar research on ZnO nanocyrstals during my Master’s dissertation, summary of which is mentioned below.
I can claim a strong background in Semiconductor physics (Materials and devices) as this has been my area of specialization at university level. At my university, having my proclivity towards Electronic materials, I decided to undertake my dissertation for masters in the field of Semiconductors and Dielectric materials. I selected to study Zinc Oxide (ZnO) nanocrystals as a material for its change in semiconducting, optical, dielectric & structural properties upon doping of Li and V under renowned professor Dr Chandana Rath( http://www.iitbhu.ac.in/mst/Prof.%20Chandanarath/Prof.Rath/Chandana%20Rath/index.htm ) . ZnO is an indirect wide band gap semiconducting material which has intrinsic n-type of nature. Development of p-type material will open up a new frontier in semiconductor industry as fabrication of ZnO based devices will be made possible. During my thesis work I performed various optical (PL, UV-vis) & electrical characterization on the material. Among the findings of my project were:
1) Change in Hall coefficient of Li doped ZnO so that intrinsic n-type semiconducting nature of ZnO is reduced ,although goal of achieving p-type ZnO was not achieved . I also tried to give a hypothesis regarding intrinsic n-type conductivity of ZnO.
Significant change in optical band gap of material was reported with increased level of doping.
3) Successful doping of pentavalent Vanadium ion in divalent site of ZnO , which is very difficult in accordance with Hume - Rothery rule.
4) Dramatic change in dielectric behavior of V-doped ZnO at lower frequencies with dielectric constant going as high as 10000 for 7.5% doping of V. ( the value is 9 for pure ZnO).
In addition to the deep seated interest in semiconductor physics and devices, I am equipped with fundamental knowledge of material sciences necessary to conduct the thesis work. Having done my courses in Nanomaterials, Electronic devices,Advanced Techniques in material characterization, Electronic materials, I find myself adequately equipped to conduct research in an interdisciplinary way . The knowledge gained is reflected in my overall grade points at the end of degree i.e 8.08/10.
Having seen the congruence in our research interests, It demanded to my logic and emotions that working under your guidance will be enriching and productive experience of my life and we can together contribute towards advancement of semiconductors.
Regarding my educational background , it has always being on a bright side. I have been a First class student throughout my student life. I have cleared IIT-JEE, which is regarded as toughest exam to crack in India, in very first attempt. I have also been a holder of Scholarship offered by Government of India for pursuing Masters research.Government of India also awarded me a fellowship to conduct research in material science at Defense department.
Besides,living in France will be a pleasure for me , as I had studied French language as a part of my school curriculum and have a medium level proficiency in it. So ,adjusting to French cultural life will be an enriching experience of my life.
I am eagerly waiting for your reply, so that, with your consent I can proceed with my application procedure. Kindly communicate to me any other information needed for your satisfaction.
Thanking you,
Laxank Purohit,
Mumbai, India.
Respected Sir,
I write this to express my earnest interest in pursuing a doctoral degree under your guidance (CEA code: SL-DRT-16-0649) . I have obtained an Integrated dual degree (Bachelor’s + Master’s) in Material Science and Technology from Indian Institute of Technology(IIT) – Banaras Hindu University, which is one of the topmost and reputed institute of India. I had completed my degree in 2012 , and thereafter , I was engaged in various jobs in various organizations in India.
What interests me is the area of focus of your research, which you have described in introduction to the topic . I have been an enthusiastic student of Semiconductors ever since I conducted my dissertation in the field of semiconductor materials. Conducting study on dopant migration in HgCdTe under ion irradiation will be a topic close to my heart as I have performed similar research on ZnO nanocyrstals during my Master’s dissertation, summary of which is mentioned below.
I can claim a strong background in Semiconductor physics (Materials and devices) as this has been my area of specialization at university level. At my university, having my proclivity towards Electronic materials, I decided to undertake my dissertation for masters in the field of Semiconductors and Dielectric materials. I selected to study Zinc Oxide (ZnO) nanocrystals as a material for its change in semiconducting, optical, dielectric & structural properties upon doping of Li and V under renowned professor Dr Chandana Rath( http://www.iitbhu.ac.in/mst/Prof.%20Chandanarath/Prof.Rath/Chandana%20Rath/index.htm ) . ZnO is an indirect wide band gap semiconducting material which has intrinsic n-type of nature. Development of p-type material will open up a new frontier in semiconductor industry as fabrication of ZnO based devices will be made possible. During my thesis work I performed various optical (PL, UV-vis) & electrical characterization on the material. Among the findings of my project were:
1) Change in Hall coefficient of Li doped ZnO so that intrinsic n-type semiconducting nature of ZnO is reduced ,although goal of achieving p-type ZnO was not achieved . I also tried to give a hypothesis regarding intrinsic n-type conductivity of ZnO.
Significant change in optical band gap of material was reported with increased level of doping.
3) Successful doping of pentavalent Vanadium ion in divalent site of ZnO , which is very difficult in accordance with Hume - Rothery rule.
4) Dramatic change in dielectric behavior of V-doped ZnO at lower frequencies with dielectric constant going as high as 10000 for 7.5% doping of V. ( the value is 9 for pure ZnO).
In addition to the deep seated interest in semiconductor physics and devices, I am equipped with fundamental knowledge of material sciences necessary to conduct the thesis work. Having done my courses in Nanomaterials, Electronic devices,Advanced Techniques in material characterization, Electronic materials, I find myself adequately equipped to conduct research in an interdisciplinary way . The knowledge gained is reflected in my overall grade points at the end of degree i.e 8.08/10.
Having seen the congruence in our research interests, It demanded to my logic and emotions that working under your guidance will be enriching and productive experience of my life and we can together contribute towards advancement of semiconductors.
Regarding my educational background , it has always being on a bright side. I have been a First class student throughout my student life. I have cleared IIT-JEE, which is regarded as toughest exam to crack in India, in very first attempt. I have also been a holder of Scholarship offered by Government of India for pursuing Masters research.Government of India also awarded me a fellowship to conduct research in material science at Defense department.
Besides,living in France will be a pleasure for me , as I had studied French language as a part of my school curriculum and have a medium level proficiency in it. So ,adjusting to French cultural life will be an enriching experience of my life.
I am eagerly waiting for your reply, so that, with your consent I can proceed with my application procedure. Kindly communicate to me any other information needed for your satisfaction.
Thanking you,
Laxank Purohit,
Mumbai, India.
Top answer
Dear Sir, I write this to express my genuine interest in pursuing a doctoral degree under your guidance (CEA code: SL-DRT-16-0649). I obtained an integrated dual degree (Bachelor’s + Master’s) in Material Science and Technology from the Indian Institute of Technology (IIT) – Banaras Hindu University, which is one of the most prestigious and reputable academic institutes in India. I completed my degree in 2012, and thereafter, I worked in various jobs in different organizations in India.
- Dear Sir, I write this to express my genuine interest in pursuing a doctoral degree under your guidance (CEA code: SL-DRT-16-0649).
- I obtained an integrated dual degree (Bachelor’s + Master’s) in Material Science and Technology from the Indian Institute of Technology (IIT) – Banaras Hindu University, which is one of the most prestigious and reputable academic institutes in India.
- I completed my degree in 2012, and thereafter, I worked in various jobs in different organizations in India.
- I have been an enthusiastic student of semiconductors ever since I did my dissertation work in the field of semiconductor materials.
- Dopant migration in HgCdTe under ion irradiation is a topic close to my heart as I have performed similar research on ZnO nanocyrstals during my master’s dissertation, a summary of which is mentioned below.
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1 Answers
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Dear Sir,
I write this to express my genuine interest in pursuing a doctoral degree under your guidance (CEA code: SL-DRT-16-0649). I obtained an integrated dual degree (Bachelor’s + Master’s) in Material Science and Technology from the Indian Institute of Technology (IIT) – Banaras Hindu University, which is one of the most prestigious and reputable academic institutes in India. I comple
I write this to express my genuine interest in pursuing a doctoral degree under your guidance (CEA code: SL-DRT-16-0649). I obtained an integrated dual degree (Bachelor’s + Master’s) in Material Science and Technology from the Indian Institute of Technology (IIT) – Banaras Hindu University, which is one of the most prestigious and reputable academic institutes in India. I comple
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