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USF Posted 14 years ago
Essay & Composition Writing
essay 2
Could you please check this? I would appreciate if you could correct any place sounds odd or not correct. Thanks.
"Considerable number of the reports of experiments with BTU/Bruce SEMATECH horizontal hot-wall multi-wafer LPCVD system is issued, and we prefer to use the same system for our work. In process of coating of polysilicon on wafers in a LPCVD system, Silane in a pressure between 0.1(torr) and 1(torr) with a temperature between 575°C and 625°C is deposited, and silicon in polycrystalline form gradually develop on the substrates. By decreasing pressure and in an almost vacuumed space of the chamber, the distances between molecules of gas are increased. Subsequently, the uniformity and quality of created layers will increase. This method also can be used in deposition of Nitride-Silicon.
A schematic diagram of the system is shown in figure x. The length of the reactor is 2.3 meter and the number of wafers is 150. Tube diameter is 29 cm, and diameter of each wafer is 15 cm; inter-wafer spacing is about 5 mm, and wafer thickness is about 0.7 mm."
"Considerable number of the reports of experiments with BTU/Bruce SEMATECH horizontal hot-wall multi-wafer LPCVD system is issued, and we prefer to use the same system for our work. In process of coating of polysilicon on wafers in a LPCVD system, Silane in a pressure between 0.1(torr) and 1(torr) with a temperature between 575°C and 625°C is deposited, and silicon in polycrystalline form gradually develop on the substrates. By decreasing pressure and in an almost vacuumed space of the chamber, the distances between molecules of gas are increased. Subsequently, the uniformity and quality of created layers will increase. This method also can be used in deposition of Nitride-Silicon.
A schematic diagram of the system is shown in figure x. The length of the reactor is 2.3 meter and the number of wafers is 150. Tube diameter is 29 cm, and diameter of each wafer is 15 cm; inter-wafer spacing is about 5 mm, and wafer thickness is about 0.7 mm."
Top answer
A considerable number of reports of experiments with the SEMATECH BTU Bruce horizontal hot-wall multi-wafer LPCVD system exist, and we prefer to use the same system for our work. 1 torr and 1 torr at a temperature between 575°C and 625°C, and silicon in polycrystalline form gradually develops on the substrates. By decreasing pressure and in an almost vacuumed space of the chamber , the distance between molecules of gas is increased.
- A considerable number of reports of experiments with the SEMATECH BTU Bruce horizontal hot-wall multi-wafer LPCVD system exist, and we prefer to use the same system for our work.
- 1 torr and 1 torr at a temperature between 575°C and 625°C, and silicon in polycrystalline form gradually develops on the substrates.
- By decreasing pressure and in an almost vacuumed space of the chamber , the distance between molecules of gas is increased.
- Consequently, the uniformity and quality of created layers will increase.
- This method also can be used in the deposition of silicon nitride.
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4 Answers
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A considerable number of reports of experiments with the SEMATECH BTU Bruce horizontal hot-wall multi-wafer LPCVD system exist, and we prefer to use the same system for our work. In the process of coating of polysilicon onto wafers in an LPCVD system, silane is deposited at a pressure between 0.1 torr and 1 torr at a temperature between 575°C and 625°C, and silicon in polycrystalline form graduall
00
Thank you very much enoon. 
By decreasing pressure and in an almost vacuumed space of the chamberI meant : By decreasing pressure we
By decreasing pressure and in an almost vacuumed space of the chamberI meant : By decreasing pressure we 00
A considerable number of reports of experiments with the SEMATECH BTU Bruce horizontal hot-wall multi-wafer LPCVD system exist, and we prefer to use the same system for our work. In the process of coating of polysilicon onto wafers in an LPCVD system, silane is deposited at a pressure between 0.1 torr and 1 torr at a temperature between 575°C and 625°C, and silicon in polycrystalline form graduall
00
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