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USF Posted 14 years ago
Essay & Composition Writing
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"From figure 12, it can be seen that by reducing temperature of the hot zone of the furnace to 610°C the deposition rate at the center of the wafers reduces to about 28 Å/min. Next, the temperature of the hot zone of the furnace is increased to 630°C and the simulation is repeated. In this case the deposition rate at the center of the wafers increases to about 48 Å/min.
From figures 10 and 11, changing of the hot zone’s temperature of the reaction chamber by ±10°C causes a considerable change to the deposition rate. It is because of the activation energy of the reactions, which is a function of temperature of the reaction chamber.
In this section, effect of change in pressure of reaction chamber on deposition rate is surveyed. In this case, first pressure of the chamber reduced to 0.2 torr (from 0.3 torr), and its effect on deposition rate is shown in figure 13."
From figures 10 and 11, changing of the hot zone’s temperature of the reaction chamber by ±10°C causes a considerable change to the deposition rate. It is because of the activation energy of the reactions, which is a function of temperature of the reaction chamber.
In this section, effect of change in pressure of reaction chamber on deposition rate is surveyed. In this case, first pressure of the chamber reduced to 0.2 torr (from 0.3 torr), and its effect on deposition rate is shown in figure 13."
Top answer
From Figure 12, it can be seen that by reducing the hot zone temperature of the furnace to 610°C , the deposition rate at the center of the wafers decreases to about 28 Å/min. If the simulation is repeated by increasing the temperature to 630°C, the deposition rate at the center of the wafers increases to about 48 Å/min. As shown in Figures 10 and 11, changing the hot zone’s temperature by ±10°C causes a considerable change in the deposition rate.
- From Figure 12, it can be seen that by reducing the hot zone temperature of the furnace to 610°C , the deposition rate at the center of the wafers decreases to about 28 Å/min.
- If the simulation is repeated by increasing the temperature to 630°C, the deposition rate at the center of the wafers increases to about 48 Å/min.
- As shown in Figures 10 and 11, changing the hot zone’s temperature by ±10°C causes a considerable change in the deposition rate.
- This occurs because of the reaction activation energy , which is a function of reaction chamber temperature.
- In this section , the effect of pressure change in the reaction chamber on deposition rate is surveyed.
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2 Answers
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From Figure 12, it can be seen that by reducing the hot zone temperature of the furnace to 610°C, the deposition rate at the center of the wafers decreases to about 28 Å/min. If the simulation is repeated by increasing the temperature to 630°C, the deposition rate at the center of the wafers increases to about 48 Å/min.
As shown in Figur
As shown in Figur
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